Eleven papers from the January 2002 conference present recent progress in epitaxial growth techniques for wide-bandgap nitrides, substrates for growth of low defect density wide-bandgap group-III nitrides, and wide-bandgap lasers. The contributors address the growth of nitride semiconductors by MBE and MOCVD, optoelectronic devices built on bulk gallium nitride substrates, and optical gain in nitride-based lasers. Other topics include the electronic structure of nitrogen-doped GaAs and GaP, long and short wavelength vertical cavity surface emitting lasers, and back-illuminated solar blind photodiodes. No index. Annotation c. Book News, Inc., Portland, OR