Microelectronics Technology: Polymers for Advanced Imaging and Packaging

Microelectronics Technology: Polymers for Advanced Imaging and Packaging

ISBN-10:
0841233322
ISBN-13:
9780841233324
Pub. Date:
05/05/1995
Publisher:
American Chemical Society
ISBN-10:
0841233322
ISBN-13:
9780841233324
Pub. Date:
05/05/1995
Publisher:
American Chemical Society
Microelectronics Technology: Polymers for Advanced Imaging and Packaging

Microelectronics Technology: Polymers for Advanced Imaging and Packaging

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Overview

Provides an up-to-date assessment of chemically amplified resist materials chemistry and process considerations. Reports novel chemistry for single layer 193nm lithographic applications. Discusses new approaches to silicon-containing resists and multilevel processes. Explores the design of low-dielectric polymer materials for microelectronic applications.


Product Details

ISBN-13: 9780841233324
Publisher: American Chemical Society
Publication date: 05/05/1995
Series: ACS Symposium Series , #614
Pages: 590
Product dimensions: 6.00(w) x 9.10(h) x 1.30(d)

Table of Contents

An Analysis of Process Issues with Chemically Amplified Positive Resists, O. Nalamasu, A.G. Timko, E. Reichmanis, F.M. Houlihan, A.E. Novembre, R. Tarascon, N. Mnzel, and S.G. Slater
The Annealing Concept for Environmental Stabilization of Chemical Amplification Resists, H. Ito, G. Breyta, D.C. Hofer, and R. Sooriyakumaran
Structure-Property Relationship of Acetal- and Ketal-Blocked Polyvinyl Phenols as Polymeric Binder in Two-Component Positive Deep-UV Photoresists, C. Mertesdorf, N, Mnzel, P. Falcigno, H.J. Kirner, B. Nathal, H.T. Schacht, R. Schulz, S.G. Slater, and A. Zettler
Lithographic Effects of Acid Diffusion in Chemically Amplified Resists, C.A. Mack
Acid Diffusion in Chemically Amplified Resists: The Effect of Prebaking and Post-Exposure Baking Temperature, J. Nakamura, H. Ban, A. Tanaka
Correlation of the Strength of Photogenerated Acid with the Post-Exposure Delay Effect in Positive-Tone Chemically Amplified Deep-UV Resists, F.M. Houlihan, E. Chin, O. Nalamasu, J.M. Kometani, and R. Harley
Following the Acid: Effect of Acid Surface Depletion on Phenolic Polymers, J.W. Thackeray, M.D. Denison, T.H. Fedynyshyn, D. Kang, and R. Sinta
Water-Soluble Onium Salts: New Class of Acid Generators for Chemical Amplification Positive Resists, T. Sakamizu, H. Shiraishi, and T. Ueno
Photoacid and Photobase Generators: Arylmethyl Sulfones and Benzyhydrylammonium Salts, J.E. Hanson, K.H. Jensen, N. Gargiulo, D. Motta, D.A. Pingor, A.E. Novembre, D.A. Mixon, J.M. Kometani, and C. Knurek
Functional Imaging with Chemically Amplified Resists, A. M. Vekselman,C. Zhang, and G.D. Darling
Hydrogen Bonding in Sulfone- and N-Methylmaleimide-Containing Resist Polymers with Hydroxystyrene and Acetoxystyrene: Two-Dimensional NMR Studies, S. A. Heffner, M. E. Galvin, E. Reichmanis, L. Gerena, and P. A. Mirau
NMR Investigation of Miscibility in Novolac-Poly(2-methyl-1-pentene sulfone) Resists, S. A. Heffner, D.A. Mixon, A. E. Novembre, and P.A. Mirau
Styrylmethylsulfonamides: Versatile Base-Solubilizing Components of Photoresist Resins, T.X. Neenan, E.A. Chandross, J.M. Kometani, and O. Nalamasu
4-Methanesulfonyloxystyrene: A Means of Improving the Properties of tert-Butoxycarbonyloxystyrene-Based Polymers for Chemically Amplified Deep-UV Resists, J.M. Kometani, F.M. Houlihan, S. A. Heffner, E. Chin, and O. Nalamasu
Dienone-Phenol Rearrangement Reaction: Design Pathway for Chemically Amplified Photoresists, Y. Jiang, J. Maher, and D. Bassett
Single-Layer Resist for ArF Excimer Laser Exposure Containing Aromatic Compounds, T. Ushirogouchi, T. Naito, K. Asakawa, N. Shida, M. Nakase, and T. Tada
Design Considerations for 193-nm Positive Resists, R.D. Allen, I-Y. Wan, G. M. Wallraff, R. A. DiPietro, D.C. Hofer, and R.R. Kunz
Top-Surface Imaged Resists for 193-nm Lithography, R. R. Kunz, S.C. Palmateer, M.W. Horn, A. R. Forte, and M. Rothschild
Silicon-Containing Block Copolymer Resist Materials, A.H. Gabor and C.K. Ober
A Top-Surface Imaging Approach Based on the Light-Induced Formation of Dry-Etch Barriers, U. Schaedeli, M. Hofmann, E. Tinguely, and N. Mnzel
Plasma-Developable Photoresist System Based on Polysiloxane Formation at the Irradiated Surface: A Liquid-Phase Deposition Method, M. Shirai, N. Nogi, M. Tsunooka, and T. Matsuo
New Polysiloxanes for Chemically Amplified Resist Applications, J.C. van de Grampel, R. Puyenbroek, A. Meetsma, B.A. C. Rousseeuw, E.W.J.M. van der Drift
Environmentally Friendly Polysilane Photoresists, J.V. Beach, D. A. Loy, Yu-Ling Hsiao, and R. M. Waymouth
Fluoropolymers with Low Dielectric Constants: Triallyl Ether-Hydrosiloxane Resins, H.S.-W. Hu, J.R. Griffith, L.J. Buckley, and A.W. Snow
Photophysics, Photochemistry, and Intramolecular Charge Transfer of Polyimides, M. Hasegawa, Y. Shindo, and T. Sugimura
Structure, Properties, and Intermolecular Charge Transfer of Polyimides, M. Hasegawa, J. Ishii, T. Matano, Y. Shindo, T. Sugimura, T. Miwa, M. Ishida, Y. Okabe, and A. Takahashi
Application of Polyisoimide as a Polyimide Precursor to Polymer Adhesives and Photosensitive Polymers, A. Mochizuki and M. Ueda
Polyimide Nanofoams Prepared from Styrenic Block Copolymers, J.L. Hedrick, T.P. Russell, C. Hawker, M. Sanchez, K. Carter, R. A. DiPietro, and R. Jerome
Internal Acetylene Unit as a Cross-Link Site for Polyimides, T. Takeichi and M. Tanikawa
Vapor-Depositable Polymers with Low Dielectric Constants, J.A. Moore, C. Lang, T.-M. Lu, and G.-R. Yang
Plasma Polymerization in Direct Current Glow: Characterization of Plasma-Polymerized Films of Benzene and Fluorinated Derivatives, T. Suwa, M. Jikei, M. Kakimoto, and Y. Imai
Syntheses and Properties of Allylated Poly(2,6-dimethyl-1,4-phenylene ether), Y. Ishii, H. Oda, T. Arai, and T. Katayose
Synthesis and Photochemistry of a 2,6-Dialkoxyanthracene-Containing, Side-Chain-Substituted Liquid-Crystalline Polymer, D. Creed, C.E. Hoyle, A. C. Griffin, Y. Liu, and S. Pankasem
Hybrid Polyimide-Polyphenylenes by the Diels-Alder Polymerization Between Biscyclopentadienones and Ethynyl-Terminated Imides, U. Kumar and T. X. Neenan
Polysiloxane Thermoplastic Polyurethane Modified Epoxy Resins for Electronic Application, T.-H. Ho and C.-S. Wang

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